Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100)
作者： A. J. Murrell , A. T. S. Wee , D. H. Fairbrother , N. K. Singh , J. S. Foord
DOI: 10.1063/1.346242
关键词:
摘要: The adsorption of triethylgallium on the GaAs (100) (4×1) surface has been studied using techniques low energy electron diffraction, x‐ray photoelectron and Auger spectroscopies, high resolution loss spectroscopy temperature‐programmed desorption. Condensed multilayers organometallic compound formed following at 150 K desorb from ∼170 to leave a chemisorbed molecular monolayer triethylgallium. Upon further heating this layer partially desorbs decomposes form diethylgallium in two competing processes. so can also or otherwise decompose ultimately adsorbed Ga atoms reaction which results formation hydrogen, ethene, ethane. desorption characteristics these latter species are found be similar those observed for dissociated ethyl bromide. A scheme is proposed account observations kinetic parameters obtained computer modeling results. used evaluate temperature‐dependent growth rate expected metal organic beam epitaxial GaAs. Comparison with experimental made work discussed light previous model by molecular‐beam epitaxy.
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