Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy
作者： R. Zhang , I. Bhat
DOI: 10.1007/S11664-000-0222-1
关键词: Solid-state physics 、 Metalorganic vapour phase epitaxy 、 Vapor phase 、 Torr 、 Mask layer 、 Materials science 、 Cadmium telluride photovoltaics 、 Optoelectronics 、 Epitaxy 、 Thin film
摘要: Epitaxial lateral overgrowth (ELO) is a new technique to grow low-defect-density thin films on lattice-mismatched substrates. For the ELO growth of CdTe and HgCdTe Si substrate be successful, first requirement that should selective. To end, we have used several mask materials, conditions in order obtain selective growth. A number growth-experiments been carried out, with temperatures range from 380°C 550°C, pressures 380 torr less than 20 torr. Perfectly has achieved GaAs substrates using Si3N4 as layer. Successful epitaxial was also achieved.
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