Selective growth of GaAs in the MOMBE and MOCVD systems
作者： H. Heinecke , A. Brauers , F. Grafahrend , C. Plass , N. Pütz
DOI: 10.1016/0022-0248(86)90316-7
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摘要: This paper describes a comprehensive study of selective epitaxial deposition GaAs on partly masked substrates using TMG or TEG and AsH3 in H2 (MOCVD) at 5X102 to 105 Pa total pressure, an ultra high vacuum apparatus without carrier gas (MOMBE). A minimum temperature is required obtain localized growth. increases with the overall pressure system larger for than TMG. It proposed that presence adsorbed As species SiO2 responsible breakdown selectivity.
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