Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy
作者： D. A. Andrews , M. A. Z. Rejman‐Greene , B. Wakefield , G. J. Davies
DOI: 10.1063/1.100360
关键词:
摘要: Selective area growth of InP/InGaAs multiple quantum well laser structures has been demonstrated in openings defined Si3 N4 layers on InP substrates. Growth was achieved, by metalorganic molecular beam epitaxy, as small 3 μm wide, but no occurred the dielectric coating. Cathodoluminescence from individual stripes observed at 300 K with a wavelength determined to be 1.57 and 100 1.46 μm.
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sci-hub.se 参考文章(1)
A. Okamoto, K. Ohata, Selective epitaxial growth of gallium arsenide by molecular beam epitaxy Applied Physics Letters. ,vol. 51, pp. 1512- 1514 ,(1987) , 10.1063/1.98619