Lateral Supply Mechanisms in Selective Metalorganic Chemical Vapor Deposition

摘要: Selective epitaxial growth of GaAs was carried out by atmospheric-pressure metalorganic chemical vapor deposition, and lateral supply mechanisms reactant species from mask areas to window were investigated. Since arriving on SiO2 surfaces easily reevaporated, deviation mass balance observed. In the case a with width more than 20 µm, vapor-phase diffusion dominated over increment selective epilayers because short surface-diffusion length (<1 µm). It apparent experimentally analytically that long ridged tails formed diffusion. Appearance wavelike at edges due surface (111)B facets. Surface-diffusion estimated 3 µm.