Facet growth in selective area epitaxy of Inp by MOMBE
作者： R. Matz , H. Heinecke , B. Baur , R. Primig , C. Cremer
DOI: 10.1016/0022-0248(93)90611-Y
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摘要: Abstract InP facet growth near SiO 2 mask edges during metalorganic molecular beam epitaxy is studied for various V/III ratios on (100) substrates with 2° misorientation towards (110). While ideal vertical layer occurs at high ratio even up to μm thickness, oblique (111) planes are kinetically favoured lower ratio. The a key parameter since it determines the facets lowest limited rate border of growing layer. Also diffusion length mobile adsorbed species, by which additional features and corners explained, decreases Besides interfacet driven concentration gradients between different rate, there evidence also anisotropic along [0–1] InP. We speculate that this origin fine surface ripples surfaces observed one side masks.
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sci-hub.se 参考文章(11)
G.J. Davies, P.J. Skevington, C.L. French, J.S. Foord, Selective area growth of III–V compound semiconductors by chemical beam epitaxy Journal of Crystal Growth. ,vol. 120, pp. 369- 375 ,(1992) , 10.1016/0022-0248(92)90420-N
J.P. Duchemin, M. Bonnet, F. Koelsch, D. Huyghe, A new method for the growth of GaAs epilayer at low H2 pressure Journal of Crystal Growth. ,vol. 45, pp. 181- 186 ,(1978) , 10.1016/0022-0248(78)90432-3
O. Kayser, Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE Journal of Crystal Growth. ,vol. 107, pp. 989- 998 ,(1991) , 10.1016/0022-0248(91)90592-S
H. Heinecke, B. Baur, R. Schimpe, R. Matz, C. Cremer, R. Höger, A. Miklis, Selective area epitaxy of InP/GaInAsP heterostructures by MOMBE Journal of Crystal Growth. ,vol. 120, pp. 376- 381 ,(1992) , 10.1016/0022-0248(92)90421-E
P.J. Williams, P.M. Charles, I. Griffith, L. Considine, A.C. Carter, High performance buried ridge DFB lasers monolithically integrated with butt coupled strip loaded passive waveguides for OEIC Electronics Letters. ,vol. 26, pp. 142- 143 ,(1990) , 10.1049/EL:19900096
Rajaram Bhat, Current status of selective area epitaxy by OMCVD Journal of Crystal Growth. ,vol. 120, pp. 362- 368 ,(1992) , 10.1016/0022-0248(92)90419-J
G.J. Davies, W.J. Duncan, P.J. Skevington, C.L. French, J.S. Foord, Selective area growth for opto-electronic integrated circuits (OEICs) Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 9, pp. 93- 100 ,(1991) , 10.1016/0921-5107(91)90154-N
Hideo Sugiura, Toshio Nishida, Ryuzo Iga, Takeshi Yamada, Toshiaki Tamamura, Facet growth of InP/InGaAs layers on SiO2-masked InP by chemical beam epitaxy Journal of Crystal Growth. ,vol. 121, pp. 579- 586 ,(1992) , 10.1016/0022-0248(92)90565-Z
H. Heinecke, B. Baur, A. Miklis, R. Matz, C. Cremer, R. Höger, Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE) Journal of Crystal Growth. ,vol. 124, pp. 186- 191 ,(1992) , 10.1016/0022-0248(92)90458-U
B. Perrin, Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow Journal de Physique Lettres. ,vol. 43, pp. 5- 10 ,(1982) , 10.1051/JPHYSLET:019820043010500