The role of the arsenic source in selective epitaxial growth of GaAs and AlGaAs by MOMBE
作者： C R Abernathy , S J Pearton , F Ren , P W Wisk , J R Lothian
DOI: 10.1088/0268-1242/8/6/003
关键词: Crystal growth 、 Arsenic 、 Molecular beam epitaxy 、 Nucleation 、 Trimethylgallium 、 Thin film 、 Analytical chemistry 、 Epitaxy 、 Triethylgallium 、 Chemistry
摘要: The authors have investigated the role of various arsenic precursors on selectivity GaAs and AlGaAs at low deposition temperatures,
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