Selective growth mechanism of GaAs in metalorganic molecular beam epitaxy
作者： Naoki Furuhata , Akihiko Okamoto
DOI: 10.1016/0022-0248(91)90905-K
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摘要: GaAs selective growth mechanism was investigated, based on Ga species behavior using trimethyl gallium (TMG) or triethyl (TEG) as the source. Selective growth, TMG, obtained at a substrate temperature low 400°C. In case of TEG use, above 600°C. Furthermore, deposition with SiO2 mask carried out, only an alkyl source without arsenic. The realized 350°C for TMG use and 500°C use. These results show that related to is easier desorb from surface than TEG, desorption strongly correlative temperature. Consequently, difference in may be caused by rate species, originating Moreover, rates, between surface, will contribute growth.
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