Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation
作者： Nick Julian , Phil Mages , Chong Zhang , Jack Zhang , Stephan Kraemer
DOI: 10.1007/S11664-012-2020-Y
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摘要: The effects of V/III ratio and seed window orientation on the coalescence epitaxial lateral overgrowth InP over SiO2 using metal organic vapor-phase epitaxy with tertiary butyl phosphine were investigated. Parallel lines having θ = 60° 30° off [0\( \bar{1} \)1] coalesced, their growth rate variation was measured. Coalescence separated by narrow angles in a star-like pattern also studied. We find greatest extent to occur when stripe is oriented just ⟨010⟩ directions. strongly affects coalescence, showing an alternating enhancement or inhibition depending which side direction stripes are oriented. quality coalesced material between examined cross-sectional transmission electron microscopy, illustrating most problematic directions under two conditions.
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sci-hub.se 参考文章(12)
B.M Epelbaum, D Hofmann, On the mechanisms of micropipe and macrodefect transformation in SiC during liquid phase treatment Journal of Crystal Growth. ,vol. 225, pp. 1- 5 ,(2001) , 10.1016/S0022-0248(01)01034-X
Hiromitsu Asai, Anisotropic lateral growth in GaAs MOCVD layers on (001) substrates Journal of Crystal Growth. ,vol. 80, pp. 425- 433 ,(1987) , 10.1016/0022-0248(87)90091-1
M. Ozdemir, A. Zangwill, Theory of epitaxial growth onto nonplanar substrates Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 10, pp. 684- 690 ,(1992) , 10.1116/1.577710
F. Lelarge, G. Biasiol, A. Rudra, A. Condo, E. Kapon, Self-ordered nanostructures grown by organometallic chemical vapor deposition on V-grooved substrates: experiments and Monte-Carlo simulations Microelectronics Journal. ,vol. 30, pp. 461- 466 ,(1999) , 10.1016/S0026-2692(98)00153-0
Zheng Yan, Yoshiyuki Hamaoka, Shigeya Naritsuka, Tatau Nishinaga, Coalescence in microchannel epitaxy of InP Journal of Crystal Growth. ,vol. 212, pp. 1- 10 ,(2000) , 10.1016/S0022-0248(00)00031-2
G Abstreiter, J Olajos, R Schorer, P Vogl, W Wegscheider, Properties of Sn/Ge superlattices Semiconductor Science and Technology. ,vol. 8, ,(1993) , 10.1088/0268-1242/8/1S/002
M Gibbon, J P Stagg, C G Cureton, E J Thrush, C J Jones, R E Mallard, R E Pritchard, N Collis, A Chew, Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates Semiconductor Science and Technology. ,vol. 8, pp. 998- 1010 ,(1993) , 10.1088/0268-1242/8/6/006
O. Kayser, R. Westphalen, B. Opitz, P. Balk, Control of selective area growth of InP Journal of Crystal Growth. ,vol. 112, pp. 111- 122 ,(1991) , 10.1016/0022-0248(91)90916-S
Naoki Furuhata, Akihiko Okamoto, Selective growth mechanism of GaAs in metalorganic molecular beam epitaxy Journal of Crystal Growth. ,vol. 112, pp. 1- 6 ,(1991) , 10.1016/0022-0248(91)90905-K
E. Pelucchi, V. Dimastrodonato, A. Rudra, K. Leifer, E. Kapon, L. Bethke, P. A. Zestanakis, D. D. Vvedensky, Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures Physical Review B. ,vol. 83, pp. 205409- ,(2011) , 10.1103/PHYSREVB.83.205409