Selective area epitaxy of GaAs and InGaAs by ultra-high vacuum chemical vapor deposition using triethylgallium, trimethylindium, arsine, and monoethylarsine

摘要: We have selectively grown GaAs and InGaAs epilayers on a partially masked GaAs(100) substrate by ultra-high vacuum chemical vapor deposition (UHVCVD) using triethylgallium, trimethylindium, arsine, monoethylarsine. These results indicate that UHVCVD is good selective growth method for in wide range of temperature V/III ratios. This mechanism was also examined patterned with various filling factors (the ratio the opening area to total area). show molecular reactants impinging mask are removed from without gas phase diffusion or surface diffusion, resulting no rate enhancement, an invariant composition. found better selectivity at lower temperatures than when metalorganic beam epitaxy/chemical epitaxy used.