Current status review and future prospects of CBE, MOMBE and GSMBE

摘要: Abstract This paper reviews briefly the recent progress in III–V compound semiconductor epilayer and heterostructure preparations by three different approaches: chemical beam epitaxy (CBE, employing both vapor group III V sources), metalorganic molecular (MOMBE, solid gas source (GSMBE, sources). To data, dominant effort interest is still CBE. The results obtained so far clearly demonstrated that high quality InGaAsP/InP materials heterostructures suitable for state-of-the-art device applications can be routinely prepared With new aluminum compounds becoming available, GaAs/AlGaAs with low residual carbon background also has successfully been recently. modulation doped field-effect transistors CBE have a performance similar to those epitaxy.