CBE growth of high-quality AlGaAs/GaAs heterostructures for HEMT applications

摘要: Abstract AlGaAs/GaAs heterostructures were grown by chemical beam epitaxy using triethylgallium, triisobutylaluminium and pure arsine in flow control mode with hydrogen as carrier gas. For substrate temperatures of 580°C V/III ratios 10, high quality AlGaAs layers are obtained; show abrupt smooth interfaces. Modulation doping silicon evaporated from a conventional effusion cell gives two-dimensional electron gases densities up to 1×10 12 cm -2 . Mobilities 70000 2 /V·s obtained at 77 K for 4×10 11 The lateral homogeneity the layer thickness, composition level is excellent. Perfect morphology defect about 100 observed. High mobility transistors (gate length 0.3 nm) fabricated quantum well structures transconductance 380 mS/mm.