Low-energy electron beam induced dissociation of methyl groups chemisorbed on semiconductor surfaces: (CH3)3Al adsorbed on GaAs and InSb
作者： C.P.A Mulcahy , J Eggeling , T.S Jones
DOI: 10.1016/S0009-2614(98)00329-7
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摘要: Abstract It is shown that the incident electron beam in high-resolution energy loss spectroscopy (HREELS) studies of (CH3)3Al chemisorbed on (100) surfaces GaAs and InSb leads to induced dissociation adsorbed CH3 groups. Vibrational modes associated with surface CH2 species appear spectra recorded at high energies a threshold 10 eV. Dissociation cross-sections for production have been calculated found be very large, varying between 2×10−16 cm2 30 eV 7×10−17 20 suggested an impact mechanism responsible reflect relatively long lifetime excited states which are not quenched efficiently adsorption semiconductor surfaces.
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