Chemisorption and decomposition of trimethylgallium on GaAs(100)
作者： J.R. Creighton
DOI: 10.1016/0039-6028(90)90561-L
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摘要: Abstract The chemisorption and decomposition of trimethylgallium on the gallium-rich (4 × 6) (1 GaAs(100) surfaces have been studied by temperature-programmed desorption, LEED, Auger electron spectroscopy. Upon adsorption subsequent heating, a fraction monolayer ((1.6 ± 0.7) 1014 molecules cm−2) irreversibly dissociates into monomethylgallium surface fragments. methyl radicals are observed desorbing from with narrow peak at 710 K. desorption parameters (activation energy pre-exponential factor) depend coverage, indicating significant adsorbate-adsorbate interactions. zero coverage limit are: E = 46.1 0.5 kcal mol v 1.6 1014±0.2 s−1. Higher coverages desorb molecularly in peaks 500 350 After all hydrocarbon fragments immediately converts reconstruction. excess gallium released is not incorporated GaAs apparently resides droplets. We present structural models for before after TMGa which consistent our observations.
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