Thermal and Photoinduced Decomposition Pathways of Arsine on GaAs(100)
作者： X.-Y. Zhu , M. Wolf , T. Huett , J. M. White
DOI: 10.1557/PROC-236-133
关键词:
摘要: We have studied the thermal and photoinduced dissociation pathway of AsH3 on Ga-rich GaAs(100) surface. Arsine adsorbs molecularly at 115 K dissociates upon either heating to above 140 or irradiation with 3.5 - 6.4 eV photons. The decomposition arsine is accompanied by formation surface Ga-H species, which are thermally photochemically more stable than AsHx. A comparison wavelength dependence for adsorbed gas phase reveals that excitation mechanism photochemistry substrate mediated, probably involves a charge transfer between states adsorbate.
sci-hub.se 参考文章(19)
P. Balk, Ultraviolet-assisted growth of GaAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 5, pp. 1453- 1459 ,(1987) , 10.1116/1.583841
X.‐Y. Zhu, J. M. White, The role of direct and substrate excitation in ultraviolet photolysis of phosgene on Pt(111) Journal of Chemical Physics. ,vol. 94, pp. 1555- 1563 ,(1991) , 10.1063/1.460013
C. A. Larsen, N. I. Buchan, G. B. Stringfellow, Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs Applied Physics Letters. ,vol. 52, pp. 480- 482 ,(1988) , 10.1063/1.99450
P. Drathen, W. Ranke, K. Jacobi, Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES Surface Science. ,vol. 77, ,(1978) , 10.1016/0039-6028(78)90169-3
D. J. Frankel, High-resolution electron-energy-loss spectroscopy studies of GaAs (100) surfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 5, pp. 1113- 1118 ,(1987) , 10.1116/1.583738
Masahiro Sasaki, Yoshito Kawakyu, Masao Mashita, UV Absorption Spectra of Adlayers of Trimethylgallium and Arsine Japanese Journal of Applied Physics. ,vol. 28, pp. L131- L133 ,(1989) , 10.1143/JJAP.28.L131
J.R. Creighton, Chemisorption and decomposition of trimethylgallium on GaAs(100) Surface Science. ,vol. 234, pp. 287- 307 ,(1990) , 10.1016/0039-6028(90)90561-L
Lee J. Richter, Steven A. Buntin, David S. King, Richard R. Cavanagh, Surface-state-mediated photochemistry: Laser-induced desorption of NO from Si(111) Physical Review Letters. ,vol. 65, pp. 1957- 1960 ,(1990) , 10.1103/PHYSREVLETT.65.1957
K.F. Jensen, W. Richter, R. Lückerath, P. Tommack, A. Hertling, H.J. Koss, P. Balk, CARS in situ diagnostics in MOVPE: The thermal decomposition of AsH3 and PH3 Journal of Crystal Growth. ,vol. 93, pp. 151- 158 ,(1988) , 10.1016/0022-0248(88)90520-9
M.R. Leys, H. Titze, L. Samuelson, J. Petruzzello, Growth and characterization of strained layers of GaAsxP1−x Journal of Crystal Growth. ,vol. 93, pp. 504- 511 ,(1988) , 10.1016/0022-0248(88)90574-X