Growth and characterization of strained layers of GaAsxP1−x
作者： M.R. Leys , H. Titze , L. Samuelson , J. Petruzzello
DOI: 10.1016/0022-0248(88)90574-X
关键词:
摘要: Abstract This paper discusses the growth and characterisation of thin layers GaAs x P 1− in between GaP. The samples were grown by MOVPE at atmospheric pressure using trimethylgallium, arsine phosphine. incorporation arsenic is treated with thermodynamic model, one adjustable parameter. parameter a function temperature, rate adsorption site size so we propose adsorption/desorption processes on surface determine efficiency group V species. Investigations transmission electron microscopy reveal crystallographic (im)perfection that obtained. By without interruption, compositional changes are achieved level or two monolayers. coherence interfaces tetragonal deformation lattice made visible high resolution TEM. A planar view image layer above critical thickness dislocation network which elastic strain partially relaxed.
harvard.edu
elsevier.com
sci-hub.se 参考文章(15)
Hisashi Seki, Akinori Koukitu, Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors Journal of Crystal Growth. ,vol. 74, pp. 172- 180 ,(1986) , 10.1016/0022-0248(86)90261-7
M. Razeghi, P. Hirtz, R. Blondeau, B. de Cremoux, J.P. Duchemin, Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 μm Electronics Letters. ,vol. 19, pp. 481- 483 ,(1983) , 10.1049/EL:19830327
E.T.J.M. Smeets, Solid composition of GaAs1-xPx grown by organometallic vapour phase epitaxy Journal of Crystal Growth. ,vol. 82, pp. 385- 395 ,(1987) , 10.1016/0022-0248(87)90329-0
P. M. J. Marée, J. C. Barbour, J. F. van der Veen, K. L. Kavanagh, C. W. T. Bulle‐Lieuwma, M. P. A. Viegers, Generation of misfit dislocations in semiconductors Journal of Applied Physics. ,vol. 62, pp. 4413- 4420 ,(1987) , 10.1063/1.339078
J. Y. Kim, A. Madhukar, Electronic structure of GaP–AlP(100) superlattices Journal of Vacuum Science and Technology. ,vol. 21, pp. 528- 530 ,(1982) , 10.1116/1.571753
G.B. Stringfellow, Calculation of ternary and quaternary III–V phase diagrams Journal of Crystal Growth. ,vol. 27, pp. 21- 34 ,(1974) , 10.1016/S0022-0248(74)80047-3
M.-E. Pistol, M. R. Leys, L. Samuelson, Properties of thin strained Ga(As,P) layers. Physical Review B. ,vol. 37, pp. 4664- 4670 ,(1988) , 10.1103/PHYSREVB.37.4664
Masayuki Ishikawa, Yasuo Ohba, Hideto Sugawara, Motoyuki Yamamoto, Takatosi Nakanisi, Room temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 48, pp. 207- 208 ,(1986) , 10.1063/1.96796
G. C. Osbourn, Electronic properties of strained-layer superlattices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 1, pp. 379- 382 ,(1983) , 10.1116/1.582561
U. Gnutzmann, K. Clausecker, Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure Applied Physics. ,vol. 3, pp. 9- 14 ,(1974) , 10.1007/BF00892328