Reaction mechanisms of mono-molecular layer growth using chemical adsorption
作者： Jun-ichi Nishizawa , Toru Kurabayashi
DOI: 10.1016/S0169-4332(96)00428-X
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摘要: Abstract The surface reaction mechanism of GaAs monolayer after growth using chemical adsorption Ga(CH3)3 (trimethylgallium (TMG)) and arsine (AsH3) was investigated. on GaAs(100) investigated as a function injection duration, pressure, evacuation duration TMG AsH3 photo-irradiation in an ultra-high vacuum system. It found that the rate per cycle strongly influenced by stoichiometry arsenic during growth. Furthermore, in-situ analysis mass spectroscopy measurement reflectivity performed. As result, model for adsorbed species mono-molecular layer obtained.
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