Mechanism of surface reaction in GaAs layer growth
作者： J. Nishizawa , T. Kurabayashi , H. Abe , A. Nozoe
DOI: 10.1016/S0039-6028(87)80625-8
关键词:
摘要: Molecular layer epitaxy (MLE) is a new crystal growth method which able to produce thin single films of controlled thickness. In this method, adsorption processes and surface reaction are utilized by alternate injection reactant gases. By using TMG AsH 3 , GaAs MLE was demonstrated. The dependence film thickness on the pressure supplied studied. mass spectroscopy, were formation Ga complex adsorbate produced from TMG, clarified. Moreover, it supposed that migration species an like Ga(CH ) χ in MLE.
harvard.edu
elsevier.com
sci-hub.se 参考文章(15)
J. Nishizawa, M. Kimura, Layer growth in GaAs epitaxy Journal of Crystal Growth. ,vol. 74, pp. 331- 337 ,(1986) , 10.1016/0022-0248(86)90122-3
J. Nishizawa, T. Kurabayashi, On the Reaction Mechanism of GaAs MOCVD Journal of The Electrochemical Society. ,vol. 130, pp. 413- 417 ,(1983) , 10.1149/1.2119722
Hideo Sunami, Takeshi Terasaki, Nobuo Miyamoto, Jun‐ichi Nishizawa, Surface Orientation Effect of the Shadow of the Stacking Fault Journal of Applied Physics. ,vol. 40, pp. 4670- 4673 ,(1969) , 10.1063/1.1657258
M. Shimbo, J. Nishizawa, T. Terasaki, Defect-free nucleation of silicon on {111} silicon surfaces Journal of Crystal Growth. ,vol. 23, pp. 267- 274 ,(1974) , 10.1016/0022-0248(74)90068-2
M. Ahonen, M. Pessa, T. Suntola, A study of ZnTe films grown on glass substrates using an atomic layer evaporation method Thin Solid Films. ,vol. 65, pp. 301- 307 ,(1980) , 10.1016/0040-6090(80)90240-0
J.J. Harris, B A. Joyce, P.J. Dobson, Oscillations in the surface structure of Sn-doped GaAs during growth by MBE Surface Science. ,vol. 103, ,(1981) , 10.1016/0039-6028(81)90091-1
Jun‐ichi Nishizawa, Hitoshi Abe, Toru Kurabayashi, Naoki Sakurai, Photostimulated molecular layer epitaxy Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 4, pp. 706- 710 ,(1986) , 10.1116/1.573838
J. Nishizawa, M. Shimbo, Mechanism of crystal growth in the SiCl4-H2 system Journal of Crystal Growth. pp. 215- 219 ,(1974) , 10.1016/0022-0248(74)90306-6
J. Nishizawa, M. Saito, Mechanism of chemical vapor deposition of silicon Journal of Crystal Growth. ,vol. 52, pp. 213- 218 ,(1981) , 10.1016/0022-0248(81)90196-2
Jun-Ichi Nishizawa, Takeshi Terasaki, Masafumi Shimbo, Silicon epitaxial growth Journal of Crystal Growth. ,vol. 17, pp. 241- 248 ,(1972) , 10.1016/0022-0248(72)90253-9