Molecular layer epitaxy for future devices
作者： T. Kurabayashi , J. Nishizawa
DOI: 10.1109/ICMEL.2000.840563
关键词:
摘要: Molecular layer epitaxies (MLE) of GaAs related compounds and Si with SiO/sub 2/ deposition has been developed to realize THz operating devices. At a lower process temperature than for conventional growth methods, device quality epitaxial layers were achieved by molecular epitaxy, In MLE, 100 /spl Aring/ scale static induction transistors are fabricated MLE in mixed ballistic-tunneling mode or the pure tunneling mode. For applications basic research fields surface science material studied.
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