High current capable access device for three-dimensional solid-state memory
作者： Luiz M. Franca-Neto
DOI:
关键词: Electrode 、 Current (fluid) 、 Overhead (computing) 、 Engineering 、 MESFET 、 Sense amplifier 、 Communication channel 、 Memory cell 、 Electrical engineering 、 Electronic engineering 、 Macro
摘要: The present invention generally relates to three-dimensional arrangement of memory cells and methods addressing those cells. can be arranged in a 3D orientation such that macro are the middle addressed without need for overhead wiring or by utilizing minimal amount wiring. An individual cell within applying three separate currents cell. A first current is applied directly. second source electrode MESFET, third gate MESFET permit travel through channel drain which coupled element.
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