作者: Rathinam Chandramohan , Thirukonda Anandha , Jagannathan Thirumalai
DOI: 10.5772/10087
关键词: Oxide 、 Wide-bandgap semiconductor 、 Thin film 、 Nanotechnology 、 Fabrication 、 Single crystal 、 Nanostructure 、 Nano- 、 Isotropic etching
摘要: ZnO is one of the most studied materials II-VI oxide that derive continuous attention researchers worldwide since forties (Bunn 1935). Because its current and possible applications in several novel devices, renewed interest has emerged reviews (Liu et al, 2005; Tsukazaki 2005), conference proceedings are published exclusively for nano crystallites similar systems at Singapore (2005), (2009) Changchan, China (2006) to explore feasibility commercial application future devices. Yet ream devices from this wonderful material yet be accomplished full (Wellings, 2008). With a wide band gap 3.2 eV large exciton binding energy 60 meV room temperature, ZnO, line GaN, will important blue ultraviolent optical advantages over GaN range however, being longer ability grow single crystal substrates. Other favourable aspects include broad chemistry leading many opportunities wet chemical etching, low power threshold pumping, radiation hardness biocompatibility. Together, these properties make it an ideal candidate variety ranging sensors through ultra-violet laser nanotechnology based such as displays. As fervent research into continues, difficulties fabrication p-type have so far stated development had come (Yang etal, To give quantitative report on state art nanocrystals quite difficult attempt been made survey growth system study. The solution thin films composed using two step double dip deposition method discussed In detail chapter. characterization structures reported by Wang (Wang, 2004). Mitra al (1998) prepared Zinc Oxide technique. structural, morphological characterized X-ray diffraction scanning electron microscope. They used Zn salts precursor successfully synthesized films. highly textured (ZnO) with preferred (101) orientation employing bath 2