Germanium tin: silicon photonics toward the mid-infrared [Invited]
作者： E. Kasper , M. Kittler , M. Oehme , T. Arguirov
DOI: 10.1364/PRJ.1.000069
关键词: Tin 、 Optoelectronics 、 Germanium 、 Semiconductor 、 Doping 、 Materials science 、 Light-emitting diode 、 Light emission 、 Silicon photonics 、 Molecular beam epitaxy
摘要: Germanium tin (GeSn) is a group IV semiconductor with direct band-to-band transition below 0.8 eV. Nonequilibrium GeSn alloys up to 20% Sn content were realized low temperature (160°C) molecular beam epitaxy. Photodetectors and light emitting diodes (LEDs) from in situ doped pin junctions on Ge virtual substrates. The detection wavelength for infrared radiation was extended 2 μm clear potential further extension into the mid-infrared. LEDs of 4% exhibit emission band transition, although an indirect semiconductor. photon energies span region between 0.81 0.65 eV. Optical characterization techniques such as ellipsometry, reflectometry, Raman spectroscopy used monitor incorporation
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