Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001)
作者： Manasa Medikonda , Gangadhara R Muthinti , Relja Vasić , Thomas N Adam , Alexander Reznicek
DOI: 10.1116/1.4901254
关键词:
摘要: The characterization of the optical properties pseudomorphic Ge1−xSnx/Ge/Si (x = 0 to 0.11) alloys from IR UV is presented. Ge1−xSnx were epitaxially grown on relaxed Ge Si. Rutherford backscattering (RBS) and RBS ion channeling methods used confirm Sn composition substitutional nature into lattice. confirmed using high resolution x-ray diffraction (HRXRD) transmission electron microscopy. Although HRXRD reciprocal space maps indicated that was Ge, shape Bragg peaks sample surface rough. rough morphology atomic force complex dielectric function reported in IR, visible, spectrum wavelength range 0.2–5.06 eV. E1, E1 + Δ1, E2, E0 critical points are extracted second third derivative line fitting compared with elastic theory c...
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