作者: Robert M. Hill
DOI: 10.1016/0040-6090(78)90347-4
关键词: Charge (physics) 、 Characterization (materials science) 、 Experimental work 、 Nickel oxide 、 Materials science 、 Amorphous solid 、 Condensed matter physics 、 Nanotechnology 、 Thermal conduction 、 Silicon nitride
摘要: Abstract Recent theoretical and experimental work which has led to a deeper understanding of the fundamental electronic processes in amorphous disordered semiconducting solids is reviewed. From this background characterization observed properties these materials terms distribution localized states mobility gap can be carried out. In paper technique described for evaluating band tail conduction applied silicon nitride nickel oxide.