Charge transport in band tails

作者: Robert M. Hill

DOI: 10.1016/0040-6090(78)90347-4

关键词: Charge (physics)Characterization (materials science)Experimental workNickel oxideMaterials scienceAmorphous solidCondensed matter physicsNanotechnologyThermal conductionSilicon nitride

摘要: Abstract Recent theoretical and experimental work which has led to a deeper understanding of the fundamental electronic processes in amorphous disordered semiconducting solids is reviewed. From this background characterization observed properties these materials terms distribution localized states mobility gap can be carried out. In paper technique described for evaluating band tail conduction applied silicon nitride nickel oxide.

参考文章(12)
Morrel H. Cohen, Electronic structure and transport in covalent amorphous semiconducting alloys Journal of Non-Crystalline Solids. ,vol. 2, pp. 432- 443 ,(1970) , 10.1016/0022-3093(70)90158-4
R M Hill, Carrier flow through localized states in amorphous materials Journal of Physics C: Solid State Physics. ,vol. 5, ,(1972) , 10.1088/0022-3719/5/19/001
W. E. Spear, P. G. Le Comber, Electronic properties of substitutionally doped amorphous Si and Ge Philosophical Magazine. ,vol. 33, pp. 935- 949 ,(1976) , 10.1080/14786437608221926
R. M. Hill, On the observation of variable range hopping Physica Status Solidi (a). ,vol. 35, pp. K29- K34 ,(1976) , 10.1002/PSSA.2210350151
R M Hill, Thermoelectric power and activation energy of carrier transport Journal of Physics C: Solid State Physics. ,vol. 9, ,(1976) , 10.1088/0022-3719/9/14/004
Marc Kastner, David Adler, H. Fritzsche, Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors Physical Review Letters. ,vol. 37, pp. 1504- 1507 ,(1976) , 10.1103/PHYSREVLETT.37.1504
R. A. Street, N. F. Mott, States in the Gap in Glassy Semiconductors Physical Review Letters. ,vol. 35, pp. 1293- 1296 ,(1975) , 10.1103/PHYSREVLETT.35.1293
Nevill F. Mott, E. A. Davis, Kurt Weiser, Electronic processes in non-crystalline materials ,(1940)
R. M. Hill, Variable-range hopping Physica Status Solidi (a). ,vol. 34, pp. 601- 613 ,(1976) , 10.1002/PSSA.2210340223
P. W. Anderson, Model for the Electronic Structure of Amorphous Semiconductors Physical Review Letters. ,vol. 34, pp. 953- 955 ,(1975) , 10.1103/PHYSREVLETT.34.953