Gas condensation of ultrafine silicon particles using dc magnetron sputtering
作者： D.H. Pearson , A.S. Edelstein
DOI: 10.1016/0965-9773(94)90094-9
关键词: Silicon 、 Amorphous solid 、 Materials science 、 Substrate (electronics) 、 Particle-size distribution 、 Cavity magnetron 、 Supersaturation 、 Ultrafine particle 、 Sputter deposition 、 Analytical chemistry
摘要: Abstract Ultrafine silicon particles with typical diameters of 6 nm to 30 were prepared by dc magnetron sputtering at 175 watts in argon gas pressures from 100 mtorr 700 mtorr. At mtorr, both granular amorphous film and observed, indicating that the growth occurred under conditions near threshold for supersaturation vapor. Depositions higher showed sizes did not monotonically increase pressure. In addition, grown 300 mainly structure, whereas those 500 contained a mixture diamond-cubic crystalline material. Furthermore, found depend upon whether they collected top or bottom cooled substrate. The evolution phase may occur due more thermalized vapor which occurs pressures.
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