Threshold behavior in the formation of nanoscale silicon particles prepared by sputtering
作者： D.H Pearson , A.S Edelstein
DOI: 10.1016/S0965-9773(99)00401-8
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摘要: Abstract DC magnetron sputtering of silicon was carried out at 175 watts in argon gas pressures from 100 mtorr to 900 mtorr. Sputter deposits were collected on an array transmission electron microscopy (TEM) grids placed between the sputter source and a cold-finger located 10.5 cm above source. The resulting analyzed by TEM, morphologies found include granular films, well-defined particles 5–13 nm diameter, transition that films. morphology map, as function pressure TEM-grid location, indicated more likely form higher locations farther In addition, results obtained varying temperature sputter-source/cold-finger distance can play significant role particle formation small separations. Deposits with granular-film amorphous under most conditions. However, containing exhibited diamond-cubic crystalline phase some conditions well phase.
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