Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs
作者： P. Damayanthi , R. P. Joshi , J. A. McAdoo
DOI: 10.1063/1.373742
关键词: Monte Carlo method 、 Condensed matter physics 、 Photodetection 、 Electron mobility 、 Gallium antimonide 、 Monte Carlo method for photon transport 、 Gallium arsenide 、 Physics 、 Drift velocity 、 Electronic band structure
摘要: Field dependent drift velocity results are presented for hole transport in bulk gallium antimonide material based on a Monte Carlo model which includes energy band warping. Transient velocities demonstrated to be higher than arsenide. The steady-state characteristics also shown superior. appears have potential high-speed photodetection.
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(49)
A. Fasolino, E. Molinari, J.C. Maan, Calculated longitudinal superlattice and interface phonons of {InAs}/{GaSb} superlattices Superlattices and Microstructures. ,vol. 3, pp. 117- 120 ,(1987) , 10.1016/0749-6036(87)90042-5
S. Subbanna, G. Tuttle, H. Kroemer, N -type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source Journal of Electronic Materials. ,vol. 17, pp. 297- 303 ,(1988) , 10.1007/BF02652109
H. Arimoto, N. Miura, R. J. Nicholas, N. J. Mason, P. J. Walker, High-field cyclotron resonance in the conduction bands of GaSb and effective-mass parameters at the L points Physical Review B. ,vol. 58, pp. 4560- 4565 ,(1998) , 10.1103/PHYSREVB.58.4560
F. Pascal, F. Delannoy, J. Bougnot, L. Gouskov, G. Bougnot, P. Grosse, J. Kaoukab, Growth and characterization of undoped and N -type (Te) doped MOVPE grown gallium antimonide Journal of Electronic Materials. ,vol. 19, pp. 187- 195 ,(1990) , 10.1007/BF02651744
H. Xie, W. I. Wang, J. R. Meyer, L. R. Ram‐Mohan, Normal incidence second‐harmonic generation inL‐valley AlSb/GaSb/Ga1−xAlxSb/AlSb stepped quantum wells Applied Physics Letters. ,vol. 65, pp. 2048- 2050 ,(1994) , 10.1063/1.112789
R. Beresford, L. F. Luo, K. F. Longenbach, W. I. Wang, Interband tunneling in single‐barrier InAs/AlSb/GaSb heterostructures Applied Physics Letters. ,vol. 56, pp. 952- 954 ,(1990) , 10.1063/1.102634
G. Dresselhaus, A. F. Kip, C. Kittel, Cyclotron Resonance of Electrons and Holes in Silicon and Germanium Crystals Physical Review. ,vol. 98, pp. 368- 384 ,(1955) , 10.1103/PHYSREV.98.368
RP Joshi, JA McAdoo, None, Picosecond dynamic response of nanoscale low‐temperature grown GaAs metal‐semiconductor‐metal photodetectors Applied Physics Letters. ,vol. 68, pp. 1972- 1974 ,(1996) , 10.1063/1.115643
D Kranzer, Hall and drift mobility of polar p-type semiconductors : I. Theory? Journal of Physics C: Solid State Physics. ,vol. 6, pp. 2967- 2976 ,(1973) , 10.1088/0022-3719/6/20/010
N. Bouarissa, A. Zaouixaa, J.P. Dufour, M. Certier, H. Aourag, Electronic structure of GaSb under temperature and pressure effects Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 47, pp. 1- 12 ,(1997) , 10.1016/S0921-5107(96)02030-2