Transport Properties of Wide Band Gap Semiconductors
作者： W. Russell Callen , Thomas K. Gaylord , David S. Citrin , Kevin F. Brennan
DOI:
关键词:
摘要:
参考文章(105)
Massimo V. Fischetti, Steven E. Laux, Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects Physical Review B. ,vol. 38, pp. 9721- 9745 ,(1988) , 10.1103/PHYSREVB.38.9721
E. Bellotti, K. F. Brennan, R. Wang, P. P. Ruden, Monte Carlo study of electron initiated impact ionization in bulk zincblende and wurtzite phase ZnS Journal of Applied Physics. ,vol. 83, pp. 4765- 4772 ,(1998) , 10.1063/1.367267
Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin‐ichi Nagahama, High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes Applied Physics Letters. ,vol. 67, pp. 1868- 1870 ,(1995) , 10.1063/1.114359
Justino R. Madureira, Dirk Semkat, Michael Bonitz, Ronald Redmer, Impact ionization rates of semiconductors in an electric field: The effect of collisional broadening Journal of Applied Physics. ,vol. 90, pp. 829- 836 ,(2001) , 10.1063/1.1381554
Arlynn W. Smith, Kevin F. Brennan, Hydrodynamic Simulation of Semiconductor Devices Progress in Quantum Electronics. ,vol. 21, pp. 293- 360 ,(1997) , 10.1016/S0079-6727(97)00013-X
M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, K. Rim, Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness Journal of Applied Physics. ,vol. 94, pp. 1079- 1095 ,(2003) , 10.1063/1.1585120
William Shockley, Problems related to p-n junctions in silicon Solid-State Electronics. ,vol. 2, pp. 35- 67 ,(1961) , 10.1016/0038-1101(61)90054-5
Elena Gnani, Susanna Reggiani, Massimo Rudan, Full-band transport properties of silicon dioxide using the spherical-harmonics expansion of the BTE Physica B-condensed Matter. ,vol. 314, pp. 193- 197 ,(2002) , 10.1016/S0921-4526(01)01348-5
Louis Tirino, Michael Weber, Kevin F. Brennan, Enrico Bellotti, A General Monte Carlo Model Including the Effect of the Acoustic Deformation Potential on the Transport Properties Journal of Computational Electronics. ,vol. 3, pp. 81- 93 ,(2004) , 10.1007/S10825-004-0313-Y
P. Damayanthi, R. P. Joshi, J. A. McAdoo, Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs Journal of Applied Physics. ,vol. 88, pp. 817- 821 ,(2000) , 10.1063/1.373742