A General Monte Carlo Model Including the Effect of the Acoustic Deformation Potential on the Transport Properties

摘要: In this paper we describe a model for fully numerical Monte Carlo simulator and the required inputs, which include calculation of phonon scattering rates electronic bandstructure. The is material-independent, it therefore provides great flexibility in ability to characterize many semiconductor materials, including III–V III-Nitride materials. All principal ingredients are determined numerically from first principles with one exception, that acoustic deformation potential. determination potential, specifies relative strength rate, affects calculated results. We introduce methodical approach its selection examine sensitivity primary transport quantities on magnitude. Specifically, how choice completely model, velocity field curve, average energy, impact ionization coefficients. Calculations made both bulk GaAs 3C-SiC representative MESFET structure. It found potential needs be energy dependent requires at least two values, intra-band transitions inter-band transitions. further through use introduced here, reliable transport-related results may obtained material as well devices using only single adjustable parameter.