Scattering Mechanisms for Semiconductor Transport Calculations

摘要: Monte Carlo simulations for transport in semiconductors numerically solve the Boltzmann equation while offering physically intuitive picture of free flights and carrier scatterings on a microscopic level. The aim good simulator is to give most correct realization scattering flight processes an efficient manner. This chapter treats mechanisms their implementation detail. basic treated this fall into categories phonons, static impurities, due coulomb potential other carriers (carrier-carrier interactions). Photon important specific cases (radiative recombination rates instance), but occurs time scales much longer than mentioned above, so not usually factor determining parameters