A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of highly doped layers
作者： M Cuscunà , A Bonfiglietti , R Carluccio , L Mariucci , F Mecarini
DOI: 10.1016/S0038-1101(02)00082-5
关键词: Septic drain field 、 Doping 、 Optoelectronics 、 Polysilicon depletion effect 、 Electronic engineering 、 Thin-film transistor 、 Voltage 、 Fabrication 、 Polycrystalline silicon 、 Active layer 、 Materials science
摘要: A novel fabrication process for low-temperature (<500 °C) polysilicon thin film transistors (TFTs) is proposed. The main features of such are: (i) the source and drain contacts formation by deposition lift-off doped layers, allowing to eliminate ion-implantation; (ii) use a single excimer laser annealing step active layer crystallization doping activation. gradual profile, resulting from adopted contact further smeared annealing, enables field reduction, if compared profiles that can be achieved conventional techniques. This allows substantial reduction “field enhanced” mechanisms, affecting electrical characteristics TFTs at high source/drain voltages, as kink effect leakage current. present process, thanks above mentioned features, rather attractive applications.
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