Laser Doping and Recrystallization for Amorphous Silicon Films by Plasma-Enhanced Chemical Vapor Deposition
作者： Dong Sing Wuu , Shui Yang Lien , Jui Hao Wang , Hsin-Yuan Mao , In-Cha Hsieh
DOI: 10.4028/WWW.SCIENTIFIC.NET/MSF.475-479.3791
关键词: Inorganic chemistry 、 Crystalline silicon 、 Amorphous silicon 、 Monocrystalline silicon 、 Materials science 、 Doping 、 Nanocrystalline silicon 、 Optoelectronics 、 Dopant 、 Plasma-enhanced chemical vapor deposition 、 Polycrystalline silicon
摘要: One of the most challenging problems to develop polycrystalline silicon thin-film solar cells is growth crystalline on foreign, low-cost and low-temperature substrates. In this paper, a laser doping technique was developed for plasma-deposited amorphous film. A process combination recrystallization dopant diffusion (phosphorous or boron) achieved simultaneously by annealing process. The precursor synthesized sol-gel method spin-coated sample. After irradiation, grain size doped examined be about 0.5~1.0 µm. concentrations 2×1019 5× 1018 cm-3 with Hall mobilities 92.6 37.5 cm²/V-s were laser-diffused phosphorous- boron-type polysilicon films, respectively.
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