Semiconductor X-Ray Detector Device
作者： Yamada Minoru , Simada Masaru
DOI:
关键词: Surface electrode 、 Detector 、 Semiconductor 、 X-ray detector 、 Materials science 、 Layer (electronics) 、 Electric field 、 Electrical engineering 、 Optoelectronics
摘要: A semiconductor X-ray detector device has an i layer configured to substantially a circular cylindrical shape but not conventional top-hat and p provided cover the circumferential side of layer. Both n+ n surface electrode are arranged smaller in area than bottom at order expose entirely electric field E. Accordingly, spectrum remains fractured profile when greater 33% layer, hence permitting resolving power stay high.
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