Light-emitting diodes with loop and strip electrodes and with wide medial sections
作者： Ivan Eliashevich , Louis A. Koszi , Michael G. Brown
DOI:
关键词:
摘要: Light emitting diodes such as those formed from gallium nitride based semiconductors are provided with electrode and pad structures which facilitate current spreading. The LED may be a die lower contact surface mesa projecting upwardly the surface. An on in form of ring substantially encircling mesa. In other arrangements, and/or is disposed an indentation one edge whereas top adjacent opposite
lens.org 参考文章(12)
Yukio Shakuda, Light emitting semiconductor device with sub-mount ,(1995)
Nae-Guann Yih, Bor-Jen Wu, Nai-Chuan Chen, Chien-An Chen, Light emitting diodes with spreading and improving light emitting area ,(2001)
Takashi Udagawa, Mineo Okuyama, Hisayuki Miki, Noritaka Muraki, Electrode for light-emitting semiconductor devices and method of producing the electrode ,(2004)
Daniel A. Steigerwald, Fred A. Kish, Robert M. Fletcher, Kyle J. Thomas, Steven A. Maranowski, William R. Imler, Paul S. Martin, Serge L Rudaz, Steven D. Lester, Electrode structures for light emitting devices ,(1998)
Yukio Shakuda, GaN-type light emitting device formed on a silicon substrate ,(1995)
Kanji Bando, Takao Yamada, Shuji Nakamura, Masayuki Senoh, Motokazu Yamada, Gallium nitride-based III-V group compound semiconductor device and method of producing the same ,(1994)
Takahiro Kozawa, Makoto Tamaki, Gallium nitride-based compound semiconductor light-emitting device and method for making the same ,(1992)
Masayuki Senoh, Takao Yamada, Kanji Bando, Shuji Nakamura, Motokazu Yamada, Gallium nitride-based III-V group compound semiconductor ,(1996)
Takashi Mukai, Naruhito Iwasa, Shuji Nakamura, Light-emitting gallium nitride-based compound semiconductor device ,(1993)
Yukio Shakuda, Semiconductor light emmitting device ,(1995)