Electrode for light-emitting semiconductor devices and method of producing the electrode
作者： Takashi Udagawa , Mineo Okuyama , Hisayuki Miki , Noritaka Muraki
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摘要: An electrode for a light-emitting semiconductor device includes light-permeable formed to come into contact with the surface of semiconductor, and wire-bonding that is in electrical partial at least region having higher resistance per unit area respect than semiconductor. This by forming on portion p-type GaN-base compound first layer one member selected from group consisting Au, Pt Pd overlay upper which located, second metal Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg In, heat-treating layers an atmosphere contains oxygen.
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