Gallium nitride-based compound semiconductor light-emitting device
作者： Koji Kamei
DOI:
关键词: Layer (electronics) 、 Materials science 、 Optoelectronics 、 Gallium nitride 、 Hydrogen 、 Substrate (electronics) 、 Electrode 、 Voltage 、 Impurity 、 Semiconductor
摘要: It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that excellent in light output efficiency and needs only low driving voltage (Vf). The inventive includes n-type layer, layer p-type formed stacked this order on substrate, positive negative electrodes so arranged as be contact with respectively, wherein region which impurity hydrogen atoms are co-present exists electrode, at least portion, electro-conductive transmitting material.
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