Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
作者： Motonobu Takeya
DOI:
关键词: Heat treating 、 Doping 、 Impurity 、 Electronic engineering 、 Compound semiconductor 、 Materials science 、 Semiconductor device 、 Nitride 、 Optoelectronics 、 Layer (electronics)
摘要: A method of heat-treating a nitride compound semiconductor layer, comprising heating layer doped with p-type impurity at temperature that is least 200° C. but less than 400° for 100 minutes.
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