Low creep metallization for optoelectronic applications
作者： Richard Beanland , Ian Juland , Stephen Jones
DOI:
关键词: Creep 、 Optoelectronics 、 Electrical resistivity and conductivity 、 Layer (electronics) 、 Grain size 、 Reduction (complexity) 、 Materials science
摘要: A metallization on a semiconductor substrate is disclosed in the form of laminate comprising plurality layers “conducting” for providing electrical conductivity, interspersed with another metallization. By many thickness each individual layer can be reduced. Reduction leads to reduction grain size and consequent creep over lifetime device.
lens.org 参考文章(37)
Satoshi Seo, Hisao Ikeda, Daisuke Kumaki, Junichiro Sakata, Light emitting element and display device using the same ,(2005)
Yoon-Ha Jeong, Yun-ki Hong, Kang-Sung Lee, Sung-woo Jung, Young-Su Kim, T-gate forming method for high electron mobility transistor and gate structure thereof ,(2007)
Yasuo Koide, Naoki Shibata, Masanori Murakami, Shunsuke Murai, N-electrode for iii group nitride based compound semiconductor element ,(2002)
Seiji Iida, Koichi Gen-ei, Makoto Okada, Kazuo Fukuoka, Semiconductor laser device which removes influences from returning light of three beams and a method of manufacturing the same ,(2001)
Shizuyo Noiri, Shigemi Horiuchi, Toshiya Uemura, Naoki Shibata, Devices related to electrode pads for p-type group III nitride compound semiconductors ,(1997)
Toshiya Uemura, Shigemi Horiuchi, Transparent electrode film and group III nitride semiconductor device ,(2002)
Robert Foster, Ronald S. Moore, Kevin Prosyk, Marcel Boudreau, Electrode termination for reduced local heating in the optical device ,(2001)
Kyoung-Kook Kim, Tae-yeon Seong, Dong-seok Leem, June-o Song, Nitride-based light emitting device, and method of manufacturing the same ,(2004)
Lisa Sugiura, Shinya Nunoue, Masayuki Ishikawa, John Rennie, Masahiro Yamamoto, Hidetoshi Fujimoto, Nitride compound semiconductor light emitting device ,(1998)