作者: Takashi Udagawa , Mineo Okuyama , Hisayuki Miki , Noritaka Muraki
DOI:
关键词: Semiconductor device 、 Semiconductor 、 Working electrode 、 Contact resistance 、 Electrode 、 Electrical contacts 、 Half-cell 、 Optoelectronics 、 Electronic engineering 、 Layer (electronics) 、 Materials science
摘要: An electrode for a light-emitting semiconductor device includes light-permeable formed to come into contact with the surface of semiconductor, and wire-bonding that is in electrical partial at least region having higher resistance per unit area respect than semiconductor. This by forming on portion p-type GaN-base compound first layer one member selected from group consisting Au, Pt Pd overlay upper which located, second metal Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg In, heat-treating layers an atmosphere contains oxygen.