Electrode structures for light emitting devices
作者： Daniel A. Steigerwald , Fred A. Kish , Robert M. Fletcher , Kyle J. Thomas , Steven A. Maranowski
DOI:
关键词: Heterojunction 、 Materials science 、 Light intensity 、 Electrode 、 Light emitting device 、 Optics 、 Optoelectronics 、 Layer (electronics)
摘要: A light emitting device includes a heterojunction having p-type layer and an n-type layer. The n-electrode is electrically connected to the while p-electrode p n-electrodes are positioned form region uniform intensity.
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