Gallium nitride compound semiconductor light emitting element and electrode formation thereof

摘要: PURPOSE:To improve efficiency of outside quantum a light emitting element and to make gallium nitride compound semiconductor layer side observation surface by forming translucent electrode formed metal in doped with p-type dopant. CONSTITUTION:A wafer which is laminating buffer GaN, an n-type GaN 2 Mg 3 on sapphire substrate one prepared the exposed etching 3. Then, 0.03mum-thick Ni deposited 0.07mum-thick Au Ni. Furthermore, Al also 2. After deposition, annealed at 500 deg.C for 10 minutes acquire alloy property. The cut chip 350mum square mounted cup-shaped lead frame as diode.