P-type semiconductor manufacturing method and semiconductor device
作者： Toshiaki Chiyo , Naoki Shibata
DOI:
关键词: Semiconductor device 、 Nitride 、 Metalorganic vapour phase epitaxy 、 Contact resistance 、 Surface layer 、 Electronic engineering 、 Semiconductor 、 Layer (electronics) 、 Materials science 、 Electrical resistivity and conductivity 、 Optoelectronics
摘要: A p-GaN layer (5) of group-III nitride compound semiconductor is formed on a sapphire substrate (1) by an MOVPE method. first metallic (6) Co/Au the (5). Thereafter, electron beam applied through planar applying apparatus using plasma. Thus, no damaged prevented from being in surface layer, and resistivity lowers. second (10) (Ni) then etched hydrofluoric-nitric acid. As result, almost completely removed. translucent p-electrode (7) thereon. Consequently, p-type having reduced contact resistance driven low drive voltage produced, light-transmission efficiency improved.
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