Characterization of the anisotropic chemical attack of {hk0} silicon plates in a T.M.A.H. solution

作者: A.R. Charbonnieras , C.R. Tellier

DOI: 10.1016/S0924-4247(99)00020-5

关键词: KinematicsCharacterization (materials science)AnisotropyChemical attackDissolutionCrystallographyMaterials scienceOrientation (geometry)Composite materialEtching (microfabrication)Silicon

摘要: Abstract This paper is devoted to the study of anisotropy chemical attack ( hk 0) silicon plates in a water–T.M.A.H. solution 25% weight. In first part 12 different orientations were investigated and emphasis placed on changes geometrical features etched surfaces starting circular section thick with angle cut. second orientation effects 2D experimental etching shapes are analysed determine database (composed dissolution constants) which characterizes T.M.A.H. etchant. The adequation then discussed by comparing theoretical as derived from using kinematic tensorial model anisotropic dissolution.

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