Matrix of EPROM memory cells with a tablecloth structure having an improved capacitative ratio and a process for its manufacture

作者: Orio Bellezza

DOI:

关键词: Checkerboard patternMatrix (mathematics)EPROMOptoelectronicsPerpendicularMaterials scienceGate oxideSubstrate (electronics)Electrical engineeringDielectricProcess (computing)

摘要: The matrix of EPROM memory cells comprises on a semiconductor substrate lines source and drain parallel alternated one to another, floating gate areas interposed in checkerboard pattern between said control another perpendicular superimposed condition with intermediate dielectric aligned respect areas. Field oxide are provided for, formed the other side fins over field