Phase stability during molecular beam epitaxial growth of CdTe on InSb(111) substrates
作者： J. Huerta , M. López , O. Zelaya-Angel
DOI: 10.1116/1.591459
关键词: Raman spectroscopy 、 Crystallite 、 Cadmium telluride photovoltaics 、 Electron diffraction 、 Diffraction 、 X-ray crystallography 、 Crystallography 、 Materials science 、 Molecular beam epitaxy 、 Wurtzite crystal structure
摘要: A study of CdTe layers grown by molecular beam epitaxy on InSb(111)A (In terminated), and (111)B (Sb terminated) substrates is reported. The growth InSb(111) was studied in situ reflection high-energy electron diffraction, characterized atomic force microscopy, Raman spectroscopy, x-ray photoreflectance. We observed a markedly different behavior B surfaces. grows nearly two dimensionally the surface, whereas surface three-dimensional obtained, resulting polycrystalline regions with zinc-blende wurtzite phases. Our results indicate that In–Te compounds are formed at CdTe/InSb interface. amount these larger (111)A face, thus hindering smooth this face.
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