Molecular‐beam‐epitaxy growth of CdTe on InSb (110) monitored in situ by Raman spectroscopy
作者： D. Drews , J. Sahm , W. Richter , D. R. T. Zahn
DOI: 10.1063/1.359862
关键词: Phonon scattering 、 Epitaxy 、 Substrate (electronics) 、 Materials science 、 Optoelectronics 、 Cadmium telluride photovoltaics 、 Molecular beam epitaxy 、 Analytical chemistry 、 Raman spectroscopy 、 Heterojunction 、 Layer (electronics)
摘要: … using Raman spectroscopy as a growth monitor, ie, Raman spectra were taken on line without … While at a substrate temperature of 150 “C the crystalline quality of the CdTe layer was …
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