Electrical properties and Raman study of In-doped effects in CdTe

摘要: Abstract Cadmium-telluride (CdTe) first became known as an infrared optical material one of the hot pressed polycrystalline Kodak materials. It is a very difficult to grow from melt because both elements are volatile and it has high melting point where appreciable vapour pressure can exist for even if stoichiometry near perfect. congruent 1097 °C, which means below that temperature Cd-rich liquids Te-rich in equilibrium with pure CdTe. [1]High resistivity In-doped CdTe most important materials preparation room X- ray gamma detectors. well CdTeIn strongly depends on In doping concentration growth post-annealing conditions [2,3]. this research work we studied after annealing at various temperatures using Raman spectroscopy.[4–6]