Selective control of self-organized In0.5Ga0.5As/GaAs quantum dot properties: Quantum dot intermixing
作者： D. Bhattacharyya , A. Saher Helmy , A. C. Bryce , E. A. Avrutin , J. H. Marsh
DOI: 10.1063/1.1311828
关键词: Quantum dot 、 Photoluminescence 、 Plasma-enhanced chemical vapor deposition 、 Optoelectronics 、 Band gap 、 Chemical vapor deposition 、 Rapid thermal processing 、 Materials science 、 Gallium arsenide 、 Laser linewidth
摘要: Selective postgrowth control of the photoluminescence (PL) wavelength has been demonstrated for a single layer self-organized In0.5Ga0.5As/GaAs quantum dot (QD) structure. This was achieved by rapid thermal processing dots using different dielectric caps. band gap shifts over 100 meV were obtained between samples capped with sputtered and plasma enhanced silica deposition, shift under regions covered chemical vapor deposition SiO2 less than 70 meV. The effects caps on PL linewidth also observed. differential will enable integration passive active devices in QD systems.
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