Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs∕GaAs quantum dots emitting at 1.3μm
作者： Tao Yang , Jun Tatebayashi , Kanna Aoki , Masao Nishioka , Yasuhiko Arakawa
DOI: 10.1063/1.2713135
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摘要: The authors report the effects of rapid thermal annealing (RTA) on emission properties highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3μm grown GaAs substrate by metal organic chemical vapor deposition. Postgrowth RTA experiments were performed under N2 flow temperatures ranging from 600to900°C for 30s using proximity capping. Surprisingly, in spite capping, large blueshifts peak (up to about 380meV 850°C) observed (even low temperatures) along with enhanced integrated photoluminescence (PL) intensities. Moreover, pronounced broadenings occurred (<700°C), indicating that does not always cause narrowing, as is typically traditional QDs inhomogeneous PL linewidths. mechanism behind blueshift was studied and found be attributed as-grown size, which a larger dot-barrier interface greater strain near ...
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