Diffusion of group III and V elements in SiO2
作者： A.H. Van Ommen
DOI: 10.1016/0169-4332(87)90100-0
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摘要: Abstract The diffusion of Group III and V elements in SiO2 will be reviewed. These exhibit specific properties related to the chemical state which they are incorporated SiO2. occurrence these states depends on conditions under Ion implantation results a situation oxide network is deficient oxygen. This can lead incorporation implanted element state. into three configurations: One their high valence (III or respectively) two with low (I respectively), depending thermodynamical stability composition ambient gas. mobility influenced by other often supplied from ambient. A summary presented more recent data, including differences due different states, effects concentration dependent diffusion.
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